Silicon Mode-Selective Switch via Horizontal Metal-Oxide-Semiconductor Capacitor Incorporated With ENZ-ITO

Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing

In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-i...

Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors

Complementary metal-oxide-semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in ...

Infrared electroluminescence from metal-oxide-semiconductor structures on silicon

Room temperature electroluminescence from metal-oxide–semiconductor structures on silicon is observed. The thin oxide is grown by rapid thermal oxidation. With the metal negatively biased, luminescence can be observed. The emission is voltage dependent. For an applied voltage below 5 V, the emission occurs around 1150 nm, approximately corresponding to the Si bandgap energy. For a larger applie...

III-V complementary metal-oxide-semiconductor electronics on silicon substrates.

One of the major challenges in further advancement of III-V electronics is to integrate high mobility complementary transistors on the same substrate. The difficulty is due to the large lattice mismatch of the optimal p- and n-type III-V semiconductors. In this work, we employ a two-step epitaxial layer transfer process for the heterogeneous assembly of ultrathin membranes of III-V compound sem...